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Smallest 60 V Power MOSFET Boosts Power Density

June 19, 2014
Diodes Incorporated has introduced the world's smallest 60V N-channel power MOSFET with a sub-100mohm on-resistance.

Diodes Inc. has introduced the world's smallest 60 V N-channel power MOSFET with a sub-100 mΩ on-resistance.   With a footprint measuring 1.6 mm x 1.6 mm and a typical height of 0.5 mm, the DFN1616-packaged DMN6070SFCL helps achieve higher power densities in space-critical products, including cellphones, ultra-thin LCD TVs and hand-held gaming controls.

With its very low on-resistance of only 74 mΩ typical at a VGS of 4V, the MOSFET also helps to minimize conduction losses and raise overall power efficiency.  The DMN6070SFCL handles a continuous current of 2 A and supports a pulsed current of 10 A, enabling it to cope well with DC-DC conversion spikes.

The miniature MOSFET is just one of a series of 60 V N- and P-channel devices announced by Diodes Incorporated to meet the needs of load switch, DC-DC conversion and signal switching duties.  Four larger package options are also offered: SO8, SOT23, SOT223 and TO252, suiting a wide range of applications including consumer electronics, industrial controls and HVAC equipment.

The DFN1616-packaged DMN6070SFCL 60V N-channel MOSFET is priced at $0.15 USD each in 10k quantities.

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