Powerelectronics 2771 101414irf

600 V Ultra-fast Trench IGBTs Suit Welding Applications

Oct. 16, 2014
International Rectifier has introduced the IR66xx series of high performance 600 V ultra-fast Trench-gate Field Stop insulated-gate bipolar transistors (IGBTs)

International Rectifier has introduced the IR66xx series of high performance 600 V ultra-fast Trench-gate Field Stop insulated-gate bipolar transistors (IGBTs). The family of devices features extremely low conduction and switching losses optimized for welding applications. Utilizing Trench thin wafer technology to offer lowest conduction and switching losses, the new devices are co-packaged with a soft recovery low Qrr diode and feature ultra-fast switching (8 KHz-30 KHz) with 5 µs short circuit rating. The 600 V IGBTs also feature low VCE(ON) and positive temperature coefficient for easy paralleling.

 The IR66xx series of IGBTs also features high switching frequency, maximum junction temperature of 175 °C and low EMI for improved reliability, higher system efficiency and rugged transient performance.

Pricing for the IR66xx Series ranges from US $1.49 to US $4.58 each in 10,000-unit quantities. Production orders are available immediately.

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