Diodes Incorporated has introduced the world's first DFN0606-packaged NPN and PNP devices. Occupying a board space of only 0.36mm2, the transistors are 40% smaller than the directly competing DFN1006 (SOT883) parts and deliver the same or better electrical performance. With their off-board height of only 0.4mm, they are ideally suited for wearable technology, such as smart watches and health and fitness devices, as well as other space-constrained consumer products, such as smartphones and tablets.
Diodes Incorporated's initial DFN0606 bipolar transistor offerings are two NPN and PNP devices handling a power dissipation performance as high as 830mW.
The 40V-rated MMBT3904FZ and MMBT3906FZ significantly boost power density and also provide a high 200mA collector current; while the 45V-rated BC847BFZ and BC857BFZ provide a collector current of 100mA. All devices switch on at a base-emitter voltage of less than a volt, enabling them to be fully turned on under conditions of very low portable power.