N-Channel Power MOSFETs Achieve Industry's Lowest Resistance

Texas Instruments introduced 11 new N-channel power MOSFETs to its NexFET™ product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry's lowest on-resistance, RDS(ON) , in a QFN package.

March 19, 2015

Texas Instruments introduced 11 N-channel power MOSFETs to its NexFET™ product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry's lowest on-resistance, RDS(ON) , in a QFN package. In addition, TI's new 12-V FemtoFET™ CSD13383F4 for

low-voltage battery-powered applications achieves the lowest resistance at 84-percent below competitive devices in a tiny 0.6 mm by 1 mm package.

The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs deliver higher power conversion efficiencies at higher currents, while ensuring safe operation in computer server and telecom applications. For instance, the 25-V CSD16570Q5B supports a maximum of 0.59 mW of RDS(ON), while the 30-V CSD17570Q5B achieves a maximum of 0.69 mW of RDS(ON).

TI's new CSD17573Q5B and CSD17577Q5A can be paired with the LM27403 for DC/DC controller applications to form a complete synchronous buck converter solution. The CSD16570Q5B and CSD17570Q5B NexFET power MOSFETs can be paired with a TI hot swap controller such as the TPS24720.

Available in volume now from TI and its authorized distributors, the products range in price from US$0.10 for the FemtoFET CSD13383F4 to US$1.08 for the CSD17670Q5B and CSD17570Q5B, all in 1,000-unit quantities.