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Wide Pitch eGaN FET Family Enabling High Current in Small Footprint

July 29, 2015
Efficient Power Conversion Corporation has introduced three eGaN FETs designed with a wider pitch connection layout.

Efficient Power Conversion Corporation (EPC) has introduced three eGaN FETs designed with a wider pitch connection layout. These products expand EPC's family of "Relaxed Pitch" devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, these products are much smaller and have many times superior switching performance. They are ideal for applications such as high frequency DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio.

New eGaN® power transistors extend EPC's power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines.

All three products are available for immediate delivery from Digi-Key.

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