Vishay Intertechnology Inc. recently introduced 28 new 600 V and 650 V FRED Pt Gen 4 Ultrafast recovery diodes optimized for high-frequency converters in power modules, motor drives, UPS, solar inverters, and welding machine inverters. Offered as die in wafer form, Vishay Semiconductors H- and U-series devices offer low forward voltage and reverse recovery charge to reduce losses and increase efficiency, while their extremely soft turn-off behavior minimizes overvoltages under all switching conditions.
The devices are designed for use as anti-parallel diodes in combination with Vishay's new Trench insulated gate bipolar transistors (IGBTs). Together, the Ultrafast diodes and IGBTs provide low EMI and plug-and-play reliability for single- and three-phase inverters, as well as full- and half-bridge DC/DC converters. The H- and U-series devices can also be used as stand-alone components for power factor correction (PFC) circuits, boosters, choppers, and secondary-side rectification.
Designed to minimize conduction losses in medium-speed circuits, 600 V "U" series diodes feature extremely low forward voltage down to 1.4 V for 600 V devices and 1.48 V for 650 V devices. Optimized to deliver high speeds for higher-frequency applications, "H" series diodes offer reverse recovery times down to 25 ns with low typical forward voltages down to 1.65 V for 600 V devices and 1.74 V for 650 V devices.
The Gen 4 diodes feature improved technologies in their active area and termination design — allowing for forward currents ranging from 12 A to 250 A in smaller die sizes than previous-generation devices — while their reduced thickness improves thermal impedance. For high reliability, the polyimide passivated diodes offer a high operating temperature to +175 °C.
Samples and production quantities of the Gen 4 Ultrasoft recovery diodes are now available, with lead times of eight weeks for large orders. Pricing for United States delivery only is $0.14 per piece.
