eGaN FET Enables Big Power in a Small Footprint at a Low Price

Efficient Power Conversion Corp. (EPC) recently announced the EPC2039 power transistor, a high-power density enhancement-mode gallium nitride (eGaN) device. The EPC2039 is an extremely small, 1.82 mm2, 80 VDS, 6.8 A power transistor with a maximum RDS(on) of 22 milliohms with 5 V applied to the gate.  This GaN power transistor delivers high performance in power conversion systems due to its high switching capabilities in a very small package.

The EPC2039 has many uses but is primarily designed for high frequency power conversion applications, such as synchronous rectification, Class-D audio, high voltage buck converters, wireless charging, and pulsed power (LiDAR) applications.  Emerging LiDAR applications include driverless vehicles and augmented reality. Pricing for the EPC2039 power transistors at 1K units is $0.78 each