FemtoFET 60V N-Channel Power MOSFET with Best On-Resistance
Texas Instruments introduced a new 60V N-channel FemtoFET power transistor that provides low resistance: %90 below traditional 60V load switches, reducing power loss in end-systems.
Texas Instruments introduced a new 60V N-channel FemtoFET power transistor that provides low resistance: %90 below traditional 60V load switches, reducing power loss in end-systems. The CSD18541F5 is offered in a tiny 1.53-mm-by-0.77-mm silicon-based package that has an 80 percent smaller footprint than load switches in SOT-23 packages.
The CSD18541F5 metal-oxide semiconductor field-effect transistor (MOSFET) maintains a typical on-resistance (RDS(ON)) of 54-m and is designed and optimized to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications. The tiny land grid array (LGA) package features a 0.5-mm pitch between pads for easy mounting.
The CSD18541F5 expands TI's NexFET technology portfolio of FemtoFET MOSFETs to include higher voltages and manufacturing-friendly footprints.
CSD18541F5 key features and benefits:
Ultra-low 54-m of RDS(ON) at 10-V gate-to-source (VGS) is 90 percent less than traditional 60-V load switches, providing lower power loss
Ultra-small 1.53-mm-by-0.77-mm-by-0.35-mm LGA package is 80 percent smaller than a traditional load switch in a SOT-23 package, reducing printed circuit board (PCB) board space
Manufacturing-friendly 0.5-mm pad pitch
Integrated electrostatic discharge (ESD) protection diode safeguards the MOSFET gate from over voltage.
Available in volume now from TI and its authorized distributors, the CSD18541F5 is housed in a 3-pin LGA package and priced at US$0.14 in 1,000-unit quantities.
