A GaN HEMT on a SiC substrate is the industry’s first qualified 600V HEMT device.
The TPH2006PS is said to be the first GaN high electron mobility transistor (HEMT) on SiC substrate to receive JEDEC qualification. The 600-V HEMT device comes from Transphorm Inc., Goleta, Calif., and uses high-performance EZ-GaN technology that combines low switching and conduction losses. This reduces the energy loss by to 50% compared to conventional silicon-based power conversion designs, Transphorm says. The TO-220-packaged device features RDS(on) of 150 mΩ,Qrr of 42 nC and a high frequency switching capability.
Typical applications include motor drives, power supplies and inverters for solar panels and electric vehicles.
