High-Frequency Power Module is First to Use All Silicon Carbide

Feb. 19, 2013

Employing all SiC construction, the CAS100H12AM1 from Cree is a 1200 V, 100 A power module configured in a 50 mm half-bridge circuit with five 1200 V, 80 mΩ Z-FET MOSFETs and five 1200V Z-Rec Schottky diodes (Fig. 1). Maximum junction temperature for the MOSFETs are 150°C and the diodes are 175°C. Modules are rated to 125°C maximum case temperature. And, MOSFET gate drivers are available.

The SiC components enable the module to operate at exceptionally high switching frequencies that can reduce the size, weight and cost of the power conversion system. The module has demonstrated up to 100 kHz switching frequency, which allows higher efficiency and can reduce total system costs compared with silicon-based technologies. Fig. 2 shows the module’s internal construction and Fig. 3 shows the module package. The table lists the module’s major characteristics.

The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, exercise special precautions to obtain the best performance. The interconnection between the gate driver and module housing must be as short as possible, which will provide the best switching time and avoid the potential for device oscillation. Also, to avoid excessive V_DS overshoots, use care to insure minimum inductance between the module and link capacitors.

Features:

Zero turn-off tail current from MOSFETs
Zero reverse recovery current from the Schottky diodes
High frequency operation
Easy to drive MOSFET gate
AlSiC baseplate and Si₃N₄ insulator

Benefits:

High efficiency operation
Reduced size, weight, and cost
Reduced thermal requirements
Long term stability and reliability

High Power Applications:

Solar, UPS and motor drive inverters
Light wind and traction inverters
High power auxiliary converters
Inverter replacement for silicon IGBT power modules
High SiC power density

About the Author

Sam Davis

Sam Davis was the editor-in-chief of Power Electronics Technology magazine and website that is now part of Electronic Design. He has 18 years experience in electronic engineering design and management, six years in public relations and 25 years as a trade press editor. He holds a BSEE from Case-Western Reserve University, and did graduate work at the same school and UCLA. Sam was the editor for PCIM, the predecessor to Power Electronics Technology, from 1984 to 2004. His engineering experience includes circuit and system design for Litton Systems, Bunker-Ramo, Rocketdyne, and Clevite Corporation.. Design tasks included analog circuits, display systems, power supplies, underwater ordnance systems, and test systems. He also served as a program manager for a Litton Systems Navy program.

Sam is the author of Computer Data Displays, a book published by Prentice-Hall in the U.S. and Japan in 1969. He is also a recipient of the Jesse Neal Award for trade press editorial excellence, and has one patent for naval ship construction that simplifies electronic system integration.

You can also check out his Power Electronics blog.