Check out our PCIM 2022 coverage.
This non-isolated high- and low-side gate driver with floating regulators and integrated level shifting from MindCET was specifically developed to reliably drive enhanced-mode gallium-nitride (GaN) devices, using a Class-D audio amplifier as a demonstrator.
Device features include a gate-drive strength up to 9 A, separate pull-up and pull-down outputs for gate-drive tuning, programmable true floating regulators (5 or 6 V) to protect the GaN gate against overcharging, and an integrated charge pump for 100% duty-cycle applications. Additional features include integrated bootstrap diodes and a 5-V regulator to enable single-supply voltage operation.
The slew-rate capability is in excess of 100 V/ns, and the device includes gate signal-monitoring outputs, die temperature monitoring, and undervoltage lockout outputs for HS and LS. It has separate turn-on/off programmable feed-forward dead-time and a propagation delay of 30 ns, with 1-ns delay matching between HS and LS and a tunable dead-time for an optimal switching match.
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