NexGen Power’s Vertical GaN, presented as the first GaN-on-GaN power semiconductor technology, is unlocking improvements in power conversion. Gallium-nitride (GaN) transistors offer increased breakdown voltage and higher switching frequencies than silicon and silicon carbide (SiC). Vertical GaN devices have resilience to unexpected voltage disturbances, are self-healing, and supported circuits can often eschew external voltage-clamping components.
An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the US military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications in the embedded electronic engineering space. Alix currently lives in Wiesbaden, Germany.
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