GaN-Based Power Solutions Enhance EV Drivetrain Performance
Targeting electric-vehicle (EV) powertrain applications over 100 kW, a hybrid power solution from Cambridge GaN Devices combines the benefits of gallium-nitride (GaN) and silicon technologies to keep costs low while providing high levels of efficiency.
The ICeGaN and IGBT devices can be operated in a parallel architecture having similar drive voltage ranges. The ICeGaN switch runs with low conduction and low switching losses at relatively low currents (light load), while the IGBT is dominant at relatively high currents (toward full load or during surge conditions).
Combo ICeGaN leverages the high saturation currents and avalanche-clamping capability of IGBTs with the efficient switching of ICeGaN. At higher temperatures, the bipolar component of the IGBT will start to conduct at lower on-state voltages, supplementing the loss of current in the ICeGaN. At lower temperatures, ICeGaN will take more current, with sensing and protection functions intelligently managed to optimally drive the Combo ICeGaN and enhance the safe operating area (SOA).
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