The power-semiconductor industry is experiencing growth exceeding 7% per year, driven by new applications such as electric cars and new technologies like silicon-carbide (SiC) and gallium-nitride devices. These new applications and technologies put increasing demands on power-semiconductor package performance. Specifically, power-semiconductor packaging technology must address key requirements:
- Ability to conduct the large electrical currents that flow through the device and package.
- Need to provide an effective thermal path between the device and heat sink to keep the device junction temperature within specification.
- Ability to withstand temperature and power cycling (and the resulting CTE stress) without mechanical damage, including dielectric cracking or metal delamination.