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GALLIUM NITRIDE (GAN)

GaN: From Watts to Kilowatts

TI GaN offers a compact single chip solution, high efficiency due to optimized gate drive layout, and high reliability with integrated over-current protection and 20 Million hours of device reliability hours.   

Related Resources:

1. Gallium nitride (GaN): pushing performance beyond silicon
2. A New Approach to Validate GaN FET Reliability to Power-line Surges Under Use-conditions
3. Direct-drive configuration for GaN devices
4. GaN and SiC enable increased energy efficiency in power supplies

MOSFET

How topology selection can help improve reliability in industrial AC/DC power supplies        

In the pursuit of reliability, it is important to explore topologies and circuit components that provide high efficiency. Learn how to improve the reliability of your industrial AC/DC power supply        

Related Resources:

1. Maximizing efficiency of your LLC power stage
2. An Alternative Approach to Higher-Power Boost Converters
3. THe UCC38C42 Family of High-Speed, BiCMOS Current mode PWM Controllers
4. Modelling, Analysis and Compensation of the Current-Mode Converter

IGBT

IGBT & SiC Gate Driver Fundamentals

Doing more with less power can be achieved with both IGBT and SiC but how do you choose? Get answers to common driver questions on topics including protection, isolation technology, and basic functionality.    

Related Products:  

1. Impact of an isolated gate driver 
2. Enabling high voltage signal isolation quality and reliability
3. Low-side gate drivers with UVLO versus BJT totem-pole
4. External Gate Resistor Design Guide for Gate Drivers