Discrete silicon power devices are going the way of the dinosaur as semiconductor makers and customers pursue higher efficiencies. As new semiconductor technologies such as GaN and SiC emerge, instrument vendors are addressing the test challenges the new devices impose.
First, consider the market demands: “Cloud computing and carbon emissions controls will see the extinction of the silicon semiconductor, as the power discretes market demands superior products,” according to a new report released today by business-intelligence firm GBI Research. “The new report shows that substrate technologies used in the manufacturing of power discretes have recently evolved, offering improved efficiency for the booming technology and power markets.
“Silicon (Si) was the only material originally used to produce power semiconductors. However, this has extended to include silicon carbide (SiC), gallium nitride on silicon (GaN-on-Si), gallium nitride (GaN), and gallium arsenide (GaAs), which offer improved performance.” GBI forecasts that the sales revenue of power discretes will grow at a CAGR of 6.5% from 2012 to 2016.
As for instrument vendors' efforts, Keithley today introduced its Model 2657A High Power System SourceMeter instrument. The Model 2657A includes a built-in 3,000-V, 180-W source to serve applications such as the testing power semiconductor devices, including diodes, FETs, and IGBTs, as well as characterizing materials such as GaN and SiC.
Tektronix is also investigating the test consequences of new high-power devices. Read my interview on the topic with Tektronix technical marketing engineer Randy White here.
Send me your comments: [email protected].
View previous post: Looking for a parking place?