Resistive memory is emerging as a promising new memory technology. Resistive RAM (RRAM) is a possible successor for flash, according to Jan Van Houdt, director of the flash memory program at imec. He outlined RRAM and other advanced memory technologies at the July 8 imec Technology Forum in San Francisco and summarized his presentation here.
In addition, the University of California, Riverside, has announced that a team of its researchers at the Bourns College of Engineering, has developed a way to build next-generation memory storage devices based on resistive memory.
Sean Nealon of the UCR news office reports, “The key advancement in the UC Riverside research is the creation of a zinc oxide nano-island on silicon. It eliminates the need for a second element called a selector device, which is often a diode.”
“This is a significant step as the electronics industry is considering wide-scale adoption of resistive memory as an alternative for flash memory,” said Jianlin Liu, a professor of electrical engineering at UC Riverside who is one of the authors of a paper on the topic published this week. “It really simplifies the process and lowers the fabrication cost.”
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