Peregrine Semiconductor reveals 60-GHz RF SOI switches

Oct. 10, 2016

London, UK. Peregrine Semiconductor at the European Microwave Week announced the UltraCMOS PE42525 and PE426525, which the company called the industry’s first RF SOI switches to operate up to 60 GHz. These two switches extend Peregrine’s high frequency portfolio into frequencies previously dominated by gallium-arsenide (GaAs) technology.

Both 60-GHz switches have a fast switching time of only 8 ns. The PE42525 is suitable for test-and-measurement equipment, microwave-backhaul solutions, and higher frequency switching in 5G systems. The PE426525 boasts an extended temperature range making it desirable for harsh-environment applications such oil-and-gas exploration and other industrial markets.

“From 26.5 GHz to 40 GHz and now 60 GHz, Peregrine’s high-frequency portfolio continues to reach frequencies and performance levels previously considered unattainable in RF SOI,” said Kinana Hussain, director of marketing at Peregrine Semiconductor. “The PE42525 and PE426525 are proof that RF SOI can deliver a high-performing, reliable and fast switching solution at microwave frequencies. As more applications demand higher frequency products, Peregrine will continue to break more barriers in RF SOI.”

The PE42525 and PE426525 join Peregrine’s high-frequency product portfolio, which includes multiple switches, an image-reject mixer and monolithic phase and amplitude controllers (MPACs). Peregrine’s proprietary UltraCMOS technology platform enables these products to reach high frequencies without compromising performance or reliability.

Supporting a wide frequency range from 9 kHz to 60 GHz, the PE42525 and PE426525 are single-pole double-throw (SPDT) RF switches. The two reflective switches deliver RF TRISE/TFALL time of 4 ns. Both switches have low power consumption of 450 nA. The switches deliver high port-to-port isolation, low insertion loss, high power handling, high linearity and ESD protection of 2 kV HBM. At 50 GHz, the PE42525 and PE426525 exhibit port-to-port isolation of 38 dB and insertion loss of 1.9 dB. The PE426525 has an extended temperature range that extends from -55 to +125°C.

The PE42525 and PE426525 are available as a flip-chip die with 500-micron bump pitch—a factor for high-frequency performance that eliminates performance variations due to wire-bond length.

Samples and evaluation kits are available now. For 1k-quantity orders, the PE42525 die is $40 each, and the PE426525 is $48 each.

http://www.psemi.com

About the Author

Rick Nelson | Contributing Editor

Rick is currently Contributing Technical Editor. He was Executive Editor for EE in 2011-2018. Previously he served on several publications, including EDN and Vision Systems Design, and has received awards for signed editorials from the American Society of Business Publication Editors. He began as a design engineer at General Electric and Litton Industries and earned a BSEE degree from Penn State.

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