Geneva, IL. Richardson RFPD has announced the availability of and full design support capabilities for two new UltraCMOS RF silicon-on-insulator (SOI) switches from Peregrine Semiconductor.The PE42525 and PE426525 are HaRP* technology-enhanced reflective SPDT RF switch die that support a frequency range from 9 kHz to 60 GHz. They deliver low insertion loss, high isolation, and a fast switching time of only 8 ns.
The PE42525 is suitable for test and measurement equipment, microwave-backhaul solutions, and higher frequency switching in 5G systems. The PE426525 boasts an extended temperature range (-55 °C to +125 °C), making it suitable for harsh-environment applications in industrial markets.
According to Peregrine, additional key features of the PE42525 and PE426525 include low insertion loss (from 1.3 dB at 26.5 GHz to 2.7 dB at 60 GHz), high port-to-port isolation (from 41 dB at 26.5 GHz to 36 dB at 60 GHz) and high linearity (IIP3 is +48 dBm).
*Peregrine explains that UltraCMOS technology comprises stacked FETs manufactured on an insulating sapphire substrate, providing the ability to pass high-power RF signals. Peregrine’s HaRP invention allows for very linear FETs that when stacked together provide for excellent linear performance.