Each member of the MRF8000 series of RF LDMOS devices is optimized for GSM and EDGE base-station applications and various frequency bands. These devices also are fully characterized and individually tuned to operate at frequencies from 1.8 to 2.0 GHz. According to their manufacturer, they provide maximum protection from hot carrier injection effects (less than 10% VGS drift over 20 years) without sacrificing RF performance. Input and output matching are incorporated, easing use while reducing design cycles and board space. In addition, integrated electrostatic discharge (ESD) protection is included.
The first model in the series, the MRF18060A/MRF18060AS, is qualified as a Class-2, human-body model device with a 2350-V rating. This 60-W item operates up to 2.0 GHz. Available in package styles with and without the flange, it's designed for Class AB use for GSM. Future releases will be used in Class AB for GSM and EDGE cellular radio applications. The series ranges in frequency from 1805 to 1990 MHz at 60 through 90 W, with a 13- or 13.5-dB gain and 45% or 52% efficiency.
The A/AS models cost $75.00 each in 10,000-piece quantities. Samples and small quantities are available from stock. Production quantities have a 10-week lead time, depending on volume.
Motorola, Semiconductor Products Sector, P.O. Box 52073, Phoenix, AZ 85072-2073; Randy Clark, (480) 413-5460; e-mail: [email protected]; Internet: www.motorola.com/sps/rf.