Touting throughput rates up to three times faster than similar Bluetooth V1.2 devices, the SiW4000TM system-on-chip (SoC) employs 0.13 µm CMOS process technology. Also said to consume three times less power, the chip comes in a 4.5 mm x 4.5 mm BGA and requires eight external components: six capacitors, one inductor, and one band pass filter. Backward compatible with Bluetooth V1.1 and V1.2 devices, it also provides a coexistence interface to reduce interference with collocated 802.11 systems. Other features include a direct-conversion architecture, 50? matching network, synch/asynch serial interface, ARM7 core, and a stacked flash-package footprint that is compatible with the ROM package. Samples will be available during the first quarter of 2005. RF MICRO DEVICES, Greensboro, NC. (336) 664-1233.
Company: RF MICRO DEVICES
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