EE Product News

GaAs MESFETs Are 100% RF And DC Tested

Based on GaAs MESFET technology, the FH1 and FHF1 high-dynamic-range transistors are intended for use by sophisticated RF designers who seek maximum circuit performance by designing with discrete RF building blocks. Both components feature an MTTF in excess of 100 years and are 100% RF- and dc-tested prior to shipment. The FH1 operates from a 2.7V to 5V power supply and delivers 42 dBm OIP3 with a 1.2-dB noise figure and 18-dB gain up to 3 GHz. Its small size makes it well-suited as a general-purpose amplifier or mixer building block in CDMA/TDMA/AMPS/GSM cellular and PCS applications. The FHF1 also operates from a 2.7V to 5V power supply and delivers 39 dBm OIP3 with 2.4-dB noise figure and 12-dB gain from 3 to 6 GHz. It's an effective general-purpose amp or mixer building block in WLL, WLAN and UNII applications.


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