More than 40 additions to the FLM-F Series of internally matched GaAs power FETs use enhanced performance power FET technology. Devices are available with a frequency range from 3 GHz to better than 15 GHz and are specifically tuned for L, C, S, X, and Ku radio-link and base station frequency bands. They're manufactured in P1dB power levels from less than 1W to better than 35W. Minimum guaranteed G1dB gain ranges from 9.0 dB for frequencies under 6 GHz to 5 dB at 15 GHz. The devices are made on a process proven to be reliable by over five years of production for satellite applications.
Company: FUJITSU COMPOUND SEMICONDUCTOR INC.
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