EE Product News

New RF Bipolar Transistors Enter High Gain, Low Noise Portable Products Mart

Fabricated using a discrete silicon process with ion-implanted gold metallization and nitride passivation, MRF1047, MRF1057 and MRF1027 sub-micron versions of the MRF941 transistor family have a minimum noise figure of 1 dB at 3V, frequency of 1 GHz, and current of 1, 3 and 5 mA, respectively. Maximum collector currents are 25, 45 and 70 mA, respectively. The bipolar devices are well-suited for high gain, low noise applications such as VCOs, low noise amplifiers and mixers in products such as pagers, cell phones, and other wireless products.


Product URL: Click here for more information

Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.