EE Product News

RF LDMOS Devices Boost CDMA Output

An improvement of 50% in single-ended power (up to 90W), a 25% improvement in efficiency, and superior gain performance are all claimed for the MRF19000 series of RF LDMOS devices. The parts are optimized for 1.9-GHz, PCS-band CDMA applications to provide 30% more average power at the CDMA IS-95 mask than earlier RFLDMOS generations.The transistors provide maximum protection from hot-carrier injection effects without sacrificing RF performance, it's claimed. In addition, they incorporate input and output matching, making them easier to use. ESD protection is also integrated to simplify handling and to reduce overall manufacturing costs. The 90W MRF19090 operates at 2 GHz and is designed for Class AB narrowband CDMA applications.


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