EE Product News

RF Power FETs Are Rated Up To 300W

In addition to enhanced ruggedness and power ratings up to 300W, the SD29xx series of RF power MOSFETs also feature reduced capacitance and increased gain, making the devices suitable for use in products such as MRI and plasma discharge devices. Manufactured using an unique process that helps control the characteristics of the parasitic bipolar common to DMOS devices while maintaining performance, the RF power MOSFETs also have an increased load-mismatch capability. Other features of the new FETs include special packaging that is mechanically compatible with conventional packages and that reduces thermal resistance by 25% and increases mean time before failure (MTBF). Voltage ratings range from 28V/5W to 50V/300W. Prices start at $12 each/10,000.


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