Electronic Design

RF Power Transistor Trims Broadcast-TV Transmitter Costs

High-power broadcast-TV transmitter design should become easier with the MRF6P3300H enhancement-mode MOSFET. Designed for use in TV transmitters of 1, 5, and 10 kW, it can dissipate up to 300 W. It's the next generation of Freescale Semiconductor's high-voltage, laterally diffused metal-oxide semiconductor MOS technology (LDMOS).

The n-channel device can be used in the 470- to 860-MHz range as a push-pull class AB power amplifier. It can be operated from a 32-V supply. Also, it delivers a power gain of 19 dB with an efficiency of 57.5% at 300 W. With these advances, fewer devices are needed to make a multi-kilowatt power amplifier. The leadingedge thermal-management approach enhances the MOSFET's efficiency, too.

The transistor's special package incorporates a copper laminate flange to reduce the thermal resistance by 15% to 30%. This will substantially increase the mean time to failure (MTTF), which is key in broadcast-equipment devices.

The combination of fewer devices and improved efficiency results in reduced heat dissipation. That means cooling requirements that aren't as demanding. With the lower annual power operating costs, TV stations are expected to save thousands of dollars a year.

Reference designs are available for all industry standards, including 8-VSB and OFDM for HDTV, as well as analog signals like SECAM and PAL. Simulation models are available for most of the industry-standard RF design software packages.

Contact Freescale for pricing.

Freescale Semiconductor Inc.

TAGS: Freescale
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