EE Product News

MEMS RF Switch Actuates With 3V

Strutting onto the market floor as the first 3V-actuated MEMS switch, the DKM812-3 SPDT RF switch manages frequencies up to 6 GHz with a total dc power consumption of less than 3 mW. Maximum input power is 3W with an upper limit for average power of 2W. MEMS technology is said to be responsible for the device's low insertion losses: 0.15 from dc to 1 GHz; 0.25 from 1 to 3 GHz; and 0.3 from 3 to 6 GHz. Maximum VSWRs across the same frequency segments are 1.2:1, 1.3:1, and 1.5:1, respectively. Also across the same bandwidths, minimum isolation figures are, respectively, 30, 25 and 20 dB. Overall linearity is IP3 greater than 65 dBm. The switch resides in 7 x 7 x 1.5 mm JEDEC MO-220 package with the internal switching device in a hermetically sealed CSP. DOW-KEY MICROWAVE, Ventura, CA. (805) 650-0260.


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