Ferroelectric RAMs Pack Megabit Capacity

Dec. 16, 2004

A pair of ferroelectric RAMs (FRAMs), the MB85R1001 and 1002, offer 1-Mbit storage capacity. Developed by Fujitsu Microelectronics, these FRAMs feature high-speed read and write operations (100 and 250 ns, respectively), low power consumption, and...

Dave Bursky

The FRAMs have a data write speed of over 10,000 times faster than that of the EEPROMs. Consuming less than a tenth of the power during write operations, they have rewriting endurance of more than 100,000 times higher than the EEPROMs. Both FRAMs use a 1T1C cell technology that doubles the capacity without increasing chip area, compared to the traditional 2T2C cell structures used in previous FRAMs. The M85R1001 is organized as 128 kwords by 8 bits, while the 1002 is configured as 64 kwords by 16 bits.

Both FRAMs come in TSOP48 and FBGA48 packages. Sample pricing begins at $19 each in 1000-unit lots.

Fujitsu Microelectronics America Inc.http://us.fujitsu.com/micro/fram

About the Author

Dave Bursky | Technologist

Dave Bursky, the founder of New Ideas in Communications, a publication website featuring the blog column Chipnastics – the Art and Science of Chip Design. He is also president of PRN Engineering, a technical writing and market consulting company. Prior to these organizations, he spent about a dozen years as a contributing editor to Chip Design magazine. Concurrent with Chip Design, he was also the technical editorial manager at Maxim Integrated Products, and prior to Maxim, Dave spent over 35 years working as an engineer for the U.S. Army Electronics Command and an editor with Electronic Design Magazine.