Now at Mouser: Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
Courtesy of Mouser Electronics, Inc.
Navitas Semiconductor 3300V and 2300V Silicon Carbide (SiC) MOSFETs are based on the latest GeneSiC™ trench-assisted planar (TAP) technology and feature flexible packaging formats, including power module, discrete, and known good die (KGD). For high-power density and high-reliability systems, the MOSFETs are integrated into an advanced SiCPAK™ G+ power module package, in half-bridge and full-bridge circuit configurations.