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Nexperia GANC050 50mΩ 650V GaN FETs
Nexperia GANC050 50mΩ 650V Gallium Nitride (GaN) Field-Effect Transistors (FETs) are normally-off power transistors designed for high-efficiency switching applications. These devices combine high-voltage GaN HEMT technology with a low-voltage silicon MOSFET in a cascode configuration.