MOSFET RF Switch Flaunts High Isolation

Dec. 1, 2002
As wireless technology evolves into higher frequencies, many applications are demanding higher isolation performance. To satisfy this need, Peregrine Semiconductor has announced a high-isolation, SPST 50-ohm absorptive switch. Known as the PE4246,...

As wireless technology evolves into higher frequencies, many applications are demanding higher isolation performance. To satisfy this need, Peregrine Semiconductor has announced a high-isolation, SPST 50-ohm absorptive switch. Known as the PE4246, this low-insertion-loss switch operates broadband from DC to 5.0 GHz.

The PE4246 Ultra-Thin-Silicon (UTSi) MOSFET RF switch gives isolation characteristics of 55 dB at 1 GHz and 90 dB at 5 GHz. It boasts integrated 50-ohm, 0.25-W terminations on the input and output RF ports. The PE4246 is available in a 6-lead, 3- × -3-mm MLPM package. It operates as a true single-supply device with integrated on-chip CMOS control logic. The single-pin control interface also can be driven by a +5-V TTL signal input. With a nominal 3-V supply, the switches exhibit an ultra-low power consumption of less than 33 µA. Their insertion loss is 0.8 to 1.3 dB over the operating-frequency range.

Samples of the PE4246 are available through Peregrine Semiconductor and Richardson Electronics. In volumes of 10,000, pricing starts at $1.98 per unit.

Peregrine Semiconductor Corp. 6175 Nancy Ridge Dr., San Diego, CA 92121; (858) 455-0660, FAX: (858) 455-0770, www.peregrine-semi.com.

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