Combination Schottky Diode IGBT Cuts Costs, Boosts Efficiency In Inverters

The CID150660 power switch and diode combination pack (co-pack) incorporates a 6-A, 600-V Cree silicon carbide Schottky diode along with a 15-A silicon insulated gate bipolar transistor (IGBT) from International Rectifier.
Nov. 7, 2006

The CID150660 power switch and diode combination pack (co-pack) incorporates a 6-A, 600-V Cree silicon carbide Schottky diode along with a 15-A silicon insulated gate bipolar transistor (IGBT) from International Rectifier. The Cree co-pack solution, available in an industry-standard TO-220-3 package, is designed to reduce costs and increase the efficiency of inverters used in solar, UPS, and motor-drive power applications at levels up to 3 kW. The device is the first in a series of co-pack products targeted at reducing IGBT switching losses up to 50% and overall inverter losses up to 25%. The devices are drop-in compatible with existing all-silicon units. The CID150660 is sampling now. Additional information about the co-pack devices may be obtained at www.cree.com.

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sign up for Electronic Design Newsletters
Get the latest news and updates.

Voice Your Opinion!

To join the conversation, and become an exclusive member of Electronic Design, create an account today!