As the mobile market heats up, demand for memory is about to explode. Samsung has responded with a 1-Gbit mobile DRAM using 80-nm process technology and the same packaging technique as the typical 512-Mbit double-die stack used today (see the Figure).
Yet it also includes a temperature-sensing feature that maximizes the self-refresh cycle to reduce power drain in standby mode by 30% over conventional memory chip designs, optimizing it for use in advanced handset applications, digital cameras, and portable media players.
The new chip is also at least 20% thinner than a multistack package of 512-Mbit dies. Designers can use it to craft single high-density package solutions of 1.5 Gbits or even 2 Gbits. A 1-Gbit mobile DRAM can be combined with flash memory in multichip packaging, including package-on-package designs, as well.
Production will begin in the second quarter of 2007. For more information, visit www.samsung.com.