Logical block addressing comes to NAND Flash

Logical block addressing (LBA) for NAND Flash memory—that's what Toshiba says its done with the LBA-NAND, a new range of high-capacity devices integrating the new addressing method.

NAND Flash memory currently uses the physical address access method that defines each physical page of a memory, from the chip to the block, to the page and down to the cell. Product manufacturers have to develop host-side and driver specifications that can recognise and accommodate this physical addressing. In addition, they must bear the R&D costs for developing new product specifications and drivers to absorb advances in NAND Flash memory capacity.

With the logical-address access method of LBA, each cell is assigned a unique address that's not geometry-dependent. The first cell is simply 0, and numbering continues to cover every cell. Memory increases can be accommodated by assigning a new address to each cell. This approach also allows for block management, error correction (ECC process) and wear-levelling—all of which are conventionally controlled by the host side—to be handled on the memory side by the LBA-NAND controller.

LBA-NAND is designed for use in mobile phones and mobile consumer products, such as digital audio players and personal media players. The technology will support manufacturers in developing products that can exploit advances in NAND Flash memory capacity while minimising development costs.

Toshiba will start to release samples of the new NAND Flash this month.

TAGS: Mobile Toshiba
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