D3 Semi sets global distribution agreement with Mouser

May 17, 2017

Addison, TX. D3 Semiconductor has announced that Mouser Electronics is now its global distribution partner. According to the agreement, Mouser is stocking D3 Semi’s full +FET product line of 650-V superjunction MOSFETs, which serve hard-switched applications such as PFC boost and inverters used in telecom, enterprise computing, UPS, and solar.

D3 Semi said it marks its entry in the power electronics industry by changing the DNA of power devices. Its product roadmap combines mixed-signal functions with high-voltage switching devices to provide high product reliability along with the ability to quickly tailor solutions for a variety of applications. In addition to supporting power markets in the Americas and Europe, D3 Semi has a presence in Asia through its affiliate company, D3 Asia.

D3 Asia’s president and managing director, Wally Klass, said, “We are delighted to have this world-class, highly regarded distributor stocking our initial offering of +FET MOSFETs. Mouser’s approach to customer service, like ours, is to provide best-quality products combined with fast and flexible delivery.” Scott Carson, vice president of worldwide sales and marketing for D3 Semiconductor, added, “Mouser’s global footprint and focus on supporting design engineering efforts fit well into D3’s go-to-market strategy.”

Each +FET superjunction power MOSFET in the D3 Semi portfolio targets a 650-V node, which helps improve power densities of applications traditionally served by IGBTs such as inverters and motor drives.

“D3 Semi’s +FET superjunction technology is unique in fusing the power and efficiency of superjunction architectures with mixed-signal precision,” said Kristin Schuetter, vice president, supplier management, products, of Mouser Electronics. “Our customers in a wide range of demanding high-reliability power markets will benefit from D3 Semi’s high-performance, scalable solutions.”

+FET MOSFETs feature an ultra-low on-state resistance (RDSON) ranging from 32 mΩ to 1000 mΩ for improved performance in low-frequency applications, as well as fast-switching capabilities that enable the devices to perform rapid transfers of the gate charge in a short period of time. Each device in the family is 100% avalanche tested at the industry’s highest avalanche current levels during production to ensure the most robust solution for even the most demanding applications. The devices also meet the JESD 22 standard for electrostatic discharge (ESD) performance and are high temperature reverse bias (HTRB) stress tested at over 3,000 hours.


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