With new medium-voltage transistors, X-FAB Silicon Foundries has rolled out a complement to its XT018 180-nm, BCD-on-SOI technology platform for automotive devices. The medium-voltage devices cover voltages from 12 to 32 V. Now, customers can access a complete portfolio of different voltage options from 10 to 200 V.
These new complementary NMOS/PMOS devices support automotive AEC-Q100 grade-0 designs and deliver competitive on-resistance (R(DS)on) figures combined with robust safe-operating areas for R(DS)on, IDSAT and VTH. Designs may be optimized for operational performance and size by selecting the most appropriate transistors. X-FAB’s XT018 technology is also touted as the only one that offers a full range of automotive grade-0 qualified memory options, including SONOS-based flash and embedded EEPROM. With these medium-voltage devices, engineers can design more cost-effective end products such as 100- and 200-V high-side gate drivers and smart, integrated brushless dc motor drives.
In addition to the availability of the new medium-voltage devices, X-FAB has begun full-volume production of the 70- to 125-V high-voltage transistors released last summer. These devices, which are mainly targeted at the growing market for automotive 48-V board net and battery-management-system (BMS) ICs, also can satisfy requirement in industrial and consumer applications.
BCD-on-SOI technology is superior in many aspects when compared to conventional bulk BCD technologies. Key advantages include virtual latch-up-free circuits, strong EMC resilience (due to complete isolation with buried oxide/DTI), lowest substrate coupling for fast switching dc-dc converters, and simplified handling of below-ground transients. Furthermore, through the potential for significant die-size reduction along with first-time-right implementation, it’s possible to accelerate development periods and achieve lower costs per die.
Contact X-FAB for more information on price and availability.
