EE Product News

1.8V, Dual-Bank, Page-Mode Flash Is Launched

Cell phones, PDAs, set-top boxes, printers, and other products requiring a single non-volatile memory to store both program code and random byte-level parameters represent key markets for a new 32-Mbit flash memory that combines a Dual Bank architecture and fast Page Mode access with 1.8V operation. Organized as 2 Mb x 16 bits, M59DR032 flash memory is configured as 71 asymmetrical blocks divided into two banks, with the Dual Bank architecture allowing one bank to be read while the other is being programmed or erased. And an Erase Suspend mechanism allows data in one block to be accessed while another block in the same bank is being erased. The M59DR032 operates from a 1.65V to 2.2V supply and has a typical random access time of 100 ns at 1.8V, with the asynchronous page mode allowing words within a 4-word page to be accessed in just 35 ns. Samples of the flash are available now.


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TAGS: Digital ICs
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