Low-Voltage Chip Integrates Flash With E2 Memory

A family of low-voltage application-specific memory devices combine the company's high-density SuperFlash memory with the functionality of E² memory on a single, monolithic device. Designated as the SST38UF166, the device is claimed to represent the first integration of nonvolatile flash and E² memory functions on a standalone device, offering concurrent flash memory read and write operations. Using a triple-bank architecture whereby two banks contain 8 Mb each of flash and one bank of 64 Kb of word-alterable E² memory, simultaneous memory write and read operations are possible. Other features include 2.2V to 3.6V operation, an auto low-power mode drawing 2 µA in standby, a flash-bank-erase time of 100 µs maximum, and a flash sector or block erase time of 25 µs maximum. Pricing is $6.99 each/100,000.