Said to triple the performance of earlier versions, Intel’s next-generation 3V StrataFlash memory uses 0.25-µm lithography and multi-level cell technology to provide both code execution and data storage on a single, high-density, 128-Mbit chip. The devices’ Page Mode feature allows for up to 42-ns effective read access to boost feature sets and access times for handheld systems, smart phones, PC companions, networking products, set-top boxes, and other Internet-connected applications. Portables will especially benefit from the 3V implementation, which also supports an input voltage range of 2.7V to 3.6V. With this generation of StrataFlash memories, single-chip storage capacity is doubled to 128 Mbits, reportedly making these devices the largest NOR-based flash memory available today. A 128-bit OTP protection register addresses system maintenance and security issues. Three density levels will be offered: 32, 64 and 128 Mbits.
Company: INTEL CORP.
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