Electronic Design
The new EEPROM semiconductor is based on Northrop Grummanrsquos existing 256kB EEPROM part W28C256 pictured here Image courtesy of Northrop Grumman

The new EEPROM semiconductor is based on Northrop Grumman’s existing 256-kB EEPROM part (W28C256), pictured here. (Image courtesy of Northrop Grumman.)

Radiation-Hardened EEPROM Completes Qualification Testing

In space, the ability to hold critical mission data for decades at a time is vital—a task that often falls to radiation-hardened erasable programmable read-only memory (EEPROM) semiconductor devices. Without excessive shielding, rewrite circuits, or climate controls, the devices must live up to rather high standards. A new EEPROM semiconductor from Northrop Grumman recently completed qualification testing for such space applications.

The W28C0108 1-Mbit EEPROM includes latch-up immune operation, 10,000+ endurance cycles, less than 250-ns READ access time, 300-krad (Si) total ionizing dose, and Joint Electron Device Engineering Council (JEDEC) pin-compatibility in the center 32 pins. It also features 100-ms programming time and 3.3-V (VDD) read operation. Based on the company’s existing 256-kB EEPROM part (W28C256), the device is a 128-kb by 8-bit CMOS EEPROM operating across the full military temperature range.

The device underwent dynamic life testing at 150°C for 1000 hours, in addition to heavy ion latch-up and other testing. Results showed that memory retention at 125°C could last for more than 200 years. Alongside its military use, the device supports a variety of features for commercial applications, including self-timed programming, combined erase/write, auto program start, asynchronous addressing, and data polling.

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