EE Product News

SRAM Modules Support Linear Or Sequential Burst Access

Organized as 4 x 512K x 72 and packaged in an 84-position, dual key, double high DIMM are a pair of 16 MB synchronous/synchronous burst pipeline SRAM modules supporting either linear or sequential burst access. The 3.3-V modules feature access speeds of 5, 6, 6.5 and 7 ns. The WED2DG472512V-D2 features pipeline architecture with a single cycle de-select while the WED2EG472512V-D2 has a dual cycle deselect. When used in burst mode, the modules generate 3-1-1-1 accesses. When used in synchronous only mode, they provide an economical alternative to ultra high speed CMOS asynchronous architectures. The modules are well suited for applications requiring high density, high performance memory such as port buffer arrays in WAN platforms. Pricing is $765.00 each/5,000. Lead time is 8-10 weeks ARO.


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TAGS: Digital ICs
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