The State of the Art in Wide-Bandgap Semiconductors
Integration of SiC and GaN in power electronics continues to ramp up. Power Integrations’ Andy Smith discusses the latest advances in WBG tech, including a new 1,700-V GaN switch developed by PI.
The promise of wide-bandgap (WBG) semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are finally being manifested in advanced products and solutions for power electronics. In this podcast, we talk to Andy Smith of Power Integrations about the latest developments in the WBG space.
On this front, Power Integrations recently released a new member of its InnoMux-2 family of single-stage, independently regulated, multi-output, offline power-supply ICs, featuring what the company claims is the first 1,700-V GaN switch.
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An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the US military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications in the embedded electronic engineering space. Alix currently lives in Wiesbaden, Germany.
Also check out his YouTube watch-collecting channel, Talking Timepieces.
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