Highlights include a new family of high-efficiency 600-V superjunction (SJ) power MOSFETs, the first CXL 2.0 DRAM with 128 GB of memory capacity, and a series of USB redrivers that can send high-speed data signals up to 15 meters.
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James Morra is the senior editor for Electronic Design, covering the semiconductor industry and new technology trends, with a focus on power electronics and power management. He also reports on the business behind electrical engineering, including the electronics supply chain. He joined Electronic Design in 2015 and is based in Chicago, Illinois.