SO-8 Dual MOSFETs Target Automotive Power Systems

July 1, 2002
Claiming the title of the industry's first Q101-qualified, dual HEXFET MOSFETs in an SO-8 package, the IRF7341Q, 7314Q, and 7103Q devices are rated for repetitive avalanche up to a maximum junction temperature of 175_C. Designed to save space in

Claiming the title of the industry's first Q101-qualified, dual HEXFET MOSFETs in an SO-8 package, the IRF7341Q, 7314Q, and 7103Q devices are rated for repetitive avalanche up to a maximum junction temperature of 175_C. Designed to save space in automotive applications, the dual FETs are designed to replace single MOSFETs in larger SOT-223 packages, as well as relays. The IRF7341Q and IRF7103Q provide an on-resistance of 50 milliohms and 130 milliohms, respectively, at 10 VGS, and the IRF7314Q has a 58 milliohms on-resistance at 4.5 VGS. Pricing starts at $0.37 each/10K for the IRF7103Q. INTERNATIONAL RECTIFIER, El Segundo, CA. (310) 252-7105.

Company: INTERNATIONAL RECTIFIER

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