Power MOSFETs Cut On Resistance

Oct. 8, 2008
Three 250V, n-channel TrenchFET power MOSFETs, the Si4434DY, Si7434DP, and SUM45N25 58, report the lowest on-resistance available in SO-8, PowerPAK SO-8, and D2PAK cases, respectively. The Si4434DY and Si7434DP specify a maximum on-resistance of 155

Three 250V, n-channel TrenchFET power MOSFETs, the Si4434DY, Si7434DP, and SUM45N25 58, report the lowest on-resistance available in SO-8, PowerPAK SO-8, and D2PAK cases, respectively. The Si4434DY and Si7434DP specify a maximum on-resistance of 155 milliohms at a 10-V gate drive and a typical gate charge value of 34 nC. In a low-thermal-resistance D2PAK, the SUM45N25 58 features on-resistance of 58 milliohms with a gate charge of 95 nC and a maximum junction temperature of 175°C. Samples and production quantities are available now with prices starting at $1.55 each/10,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.

Company: VISHAY INTERTECHNOLOGY, INC.

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