CDMA Power Amp Delivers 28 dB Gain

/As a result of a joint development effort with Atmel, the companyÕs TQ7135 CDMA power amplifier promises such features as high power added efficiency and a low quiescent current mode capability. The device is a 3V, two-stage silicon-germanium (SiGe) HBT power amplifier designed for use in IS-95/98 and AMPS compliant mobile phones. Features include: an efficiency of 40%; a high power setting of 94 mA and a low power setting of 72 mA; an adjacent channel power ratio of -49 dBc; alternate channel power of -56 dBc; gain of 28 dB; ruggedness of 10:1 VSWR under Vcc +4.5 Vdc; and full ESD protection. The device is available in a 4 mm2 surface-mount 16-pin lead-less plastic package. Call for price. TRIQUINT SEMICONDUCTOR INC., Hillsboro, OR. (503) 615-9000.