This indium-phosphide IC is said to set power output and efficiency records for its class. The two-stage amplifier achieves 427 mW of power with 19% power-added efficiency and 8.2 dB of gain at 95 GHz, which is said to be the best combination of output power and efficiency at this extremely high frequency. The chip was developed by the firm for the Microwave and Analog Front End Technology (MAFET) III program funded by the Department of Defense. The devices can increase the power output performance of satellite links, radar systems, missile seekers, and so on, without increasing power requirements.
Company: TRW INC.
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