Designed for the CDMA handset market, the RF2369 integrates a low-noise amplifier (LNA) and a power amplifier (PA) driver amplifier on a single chip and includes a low bypass loss function in the LNA. The device is a 3V switchable low-noise amplifier and features a typical low bypass loss of 2 dB. This performance is said to allow for a front-end design that meets all IS-98 requirements including IMD testing, using only two gain states and a single logic control line. In high-gain mode, the device has an LNA gain of 15.5 dB., 11.5 dBm LNA IIP3, and a 1.6 dB LNA noise figure. Manufactured with GaAs HBT process technology and available in an SOT23-6 package, price is $0.81 each/10,000. RF MICRO DEVICES, INC., Greensboro, NC. (336) 664-1233.
Company: RF MICRO DEVICES, INC.
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