RF Power Transistors Suit GSM Applications

Aimed primarily for use in GSM1800 base stations, the company's three new RF power transistors use GOLDMOS technology and are claimed to provide excellent linearity and thermal stability. The 5-W PTF10107, 12-W PTF10053, and the 60-W PTF10153 provide a total, flat gain of 33.5 dB, which is claimed to be 3 dB higher for each device than its bipolar counterpart. The PTF10107 and PTF10053 measure 4 mm x 5 mm and the PTF10153 measures 20 mm x 34 mm including flanges. Ion implantation, nitride surface passivation and gold plating are claimed to result in excellent reliability and ruggedness for the three devices.